| Autor: |
Hongtao Xu, Sanabria, Christopher, Chini, Alessandro, Wei, Yun, Heikman, Sten, Keller, Stacia, Mishra, Umesh K., York, Robert A. |
| Předmět: |
|
| Zdroj: |
International Journal of High Speed Electronics & Systems; Sep2004, Vol. 14 Issue 3, p186-191, 6p |
| Abstrakt: |
Field-plated structures can dramatically improve power capacity of GaN HEMT devices. In this paper, two different field-plated GaN HEMT structures will be demonstrated and compared to each other. The results show that a new GaN HEMT structure improves both power and noise performance without additional processing or costs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
