| Abstrakt: |
The main aim of this article has to investigate some electro-optical properties of MoS2/p-Si heterojunctions fabricated by an innovative technique, AJP. For this purpose, MoS2 thin films of different thicknesses were deposited on corning glass and p-type Si substrates by using RF magnetron sputtering. The structural, morphological and optical properties of MoS2 films were analyzed by different characterization techniques. In addition, the electrical properties of heterojunction devices of MoS2/p-Si were examined by I-V measurements. Depending on the film thickness, localized states in the band gap region, which are explained by Urbach energy, electron–phonon interaction and steepness parameter analyses, were considered to be effective on device performance. It was observed that the fabricated MoS2/p-Si device with a thickness of 10 nm exhibited a higher rectification ratio and photovoltaic outputs. According to the obtained results, this study offers a new way to make better the performance of electro-optical devices based on MoS2. [ABSTRACT FROM AUTHOR] |
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