| Autor: |
Hussein, Doha H., Sabaawi, Ahmed M. A. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2023, Vol. 2804 Issue 1, p1-9, 9p |
| Abstrakt: |
In this paper, single- and double-stage RF rectifiers operating at 433 MHz and 915 MHz for wireless implantable devices were designed. The designed circuits were simulated by using ADS simulation tools. The circuit is simulated on a FR-4 substrate layer with dielectric constant of 4.1 and a thickness of 1.6 mm. In addition, microstrip lines were added to the circuit to connect the circuit elements and mimic the real case and achieve more accurate results. The results showed that the achieved output voltage of the singe stage rectifier was around 3.5 V with a total conversion efficiency up to 60 %. On the other hand, the 915 MHz rectifier was able to provide an output voltage of more than 1 V and a conversion efficiency of 7%. The contribution of this work is the attempt to compare the performance of the same RF rectifier but at different frequency bands. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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