Autor: |
Ryzhii, M., Ryzhii, V., Shur, M. S., Mitin, V., Tang, C., Otsuji, T. |
Předmět: |
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Zdroj: |
Journal of Applied Physics; 8/28/2023, Vol. 134 Issue 8, p1-9, 9p |
Abstrakt: |
We propose and analyze the performance of terahertz (THz) room-temperature bolometric detectors based on the graphene channel field-effect transistors (GC-FET). These detectors comprise the gate barrier layer (BL) composed of the lateral hexagonal-boron nitride black-phosphorus/hexagonal-boron nitride (h-BN/b-P/h-BN) structure. The main part of the GC is encapsulated in h-BN, whereas a short section of the GC is sandwiched between the b-P gate BL and the h-BN bottom layer. The b-P gate BL serves as the window for the electron thermionic current from the GC. The electron mobility in the GC section encapsulated in h-BN can be fairly large. This might enable a strong resonant plasmonic response of the GC-FET detectors despite relatively lower electron mobility in the GC section covered by the b-P window BL. The narrow b-P window diminishes the Peltier cooling and enhances the detector performance. The proposed device structure and its operation principle promote elevated-temperature GC-FET THz detector responsivity values and other characteristics, especially at the plasmonic resonances. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
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