Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device.

Autor:	Kim, Hyejin, Seo, Jongseon, Cho, Seojin, Jeon, Seonuk, Woo, Jiyong, Lee, Daeseok
Předmět:	RANDOM access memory MASS production COMPLEMENTARY metal oxide semiconductors SYNAPSES
Zdroj:	Scientific Reports; 8/31/2023, Vol. 13 Issue 1, p1-6, 6p
Abstrakt:	Three-terminal (3T) structured electrochemical random access memory (ECRAM) has been proposed as a synaptic device based on improved synaptic characteristics. However, the proposed 3T ECRAM has a larger area requirement than 2T synaptic devices; thereby limiting integration density. To overcome this limitation, this study presents the development of a high-density vertical structure for the 3T ECRAM. In addition, complementary metal-oxide semiconductor (CMOS)-compatible materials and 8-inch wafer-based CMOS fabrication processes were utilized to verify the feasibility of mass production. The achievements of this work demonstrate the potential for high-density integration and mass production of 3T ECRAM devices. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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