| Autor: |
Yoo, Seong Jae, Kang, Ji Eun, Ji, You Jin, Tak, Hyun Woo, Cho, Byeong Ok, Kim, Young Lae, Lee, Ki Chan, Chun, Jin Sung, Kim, Yongil, Kim, Dong Woo, Yeom, Geun Young |
| Předmět: |
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| Zdroj: |
Nanotechnology; 11/12/2023, Vol. 34 Issue 46, p1-8, 8p |
| Abstrakt: |
Highly selective etching of silicon nitride over silicon oxide is one of the most important processes especially for the fabrication of vertical semiconductor devices including 3D NAND (Not And) devices. In this study, isotropic dry etching characteristics of SiN x and SiO2 using ClF3/Cl2 remote plasmas have been investigated. The increase of Cl2 percent in ClF3/Cl2 gas mixture increased etch selectivity of SiN x over SiO2 while decreasing SiN x etch rate. By addition of 15% Cl to ClF3/Cl2, the etch selectivity higher than 500 could be obtained with the SiN x etch rate of ∼8 nm min−1, and the increase of Cl percent to 20% further increased the etch selectivity to higher than 1000. It was found that SiN x can be etched through the reaction from Si–N to Si–F and Si–Cl (also from Si–Cl to Si–F) while SiO2 can be etched only through the reaction from Si–O to Si–F, and which is also in extremely low reaction at room temperature. When SiN x /SiO2 layer stack was etched using ClF3/Cl2(15%), extremely selective removal of SiN x layer in the SiN x /SiO2 layer stack could be obtained without noticeable etching of SiO2 layer in the stack and without etch loading effect. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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