Impact of Bypass Diode Fault Resistance Values on Burnout in Bypass Diode Failures in Simulated Photovoltaic Modules with Various Output Parameters.

Autor: Hamada, Toshiyuki, Azuma, Tomoki, Nanno, Ikuo, Ishikura, Norio, Fujii, Masayuki, Oke, Shinichiro
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Zdroj: Energies (19961073); Aug2023, Vol. 16 Issue 16, p5879, 9p
Abstrakt: The bypass diode (BPD), a protective element in a photovoltaic system (PVS), occasionally fails as a result of lightning damage. In this study, using various resistance values, we investigated the burnout risk of PV modules experiencing BPD failures through experiments that replicated conditions in which a BPD fails. Specifically, we evaluated the electric power generated by the failed BPD as we varied the faulty resistance value. Furthermore, we examined the impact of the failure resistance value of the BPD on PV module burnout. The results indicated that the power consumption of a BPD is particularly high, ranging from approximately 2 to 10 Ω when the PV module operates at its maximum power point. In addition, when the load is disconnected, the risk of heat generation is significantly higher, at BPD fault resistance values of approximately 0.1–10 Ω. Moreover, a faulty BPD with a resistance of approximately 0.1–10 Ω poses a high risk of burnout, particularly during load disconnection, owing to the increased heat generated by a BPD failure. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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