| Autor: |
Tyaginov, Stanislav, O'Sullivan, Barry, Chasin, Adrian, Rawal, Yaksh, Chiarella, Thomas, de Carvalho Cavalcante, Camila Toledo, Kimura, Yosuke, Vandemaele, Michiel, Ritzenthaler, Romain, Mitard, Jerome, Palayam, Senthil Vadakupudhu, Reifsnider, Jason, Kaczer, Ben |
| Předmět: |
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| Zdroj: |
Micromachines; Aug2023, Vol. 14 Issue 8, p1514, 23p |
| Abstrakt: |
We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive bias temperature instability (N/PBTI) as well as hard breakdown (HBD) characteristics of these devices. Experimental data demonstrate that p-channel transistors with SiON layers characterized by a higher nitrogen concentration have poorer NBTI reliability compared to their counterparts with a lower nitrogen content, while PBTI in n-channel devices is negligibly weak in all samples independently of the nitrogen concentration. The Weibull distribution of HBD fields extracted from experimental data in devices with a higher N density are shifted towards lower values with respect to that measured in MOSFETs, and SiON films have a lower nitrogen concentration. Based on these findings, we conclude that a higher nitrogen concentration results in the aggravation of BTI robustness and HBD characteristics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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