| Autor: |
Brezna, W., Harasek, S., Lugstein, A., Leitner, T., Hoffmann, H., Bertagnolli, E., Smoliner, J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/1/2005, Vol. 97 Issue 9, p093701, 4p, 5 Graphs |
| Abstrakt: |
In this work, quantitative scanning capacitance spectroscopy was applied to investigate the local dielectric properties of a chemical vapor deposition grown ZrO2 layer on low-doped silicon. Due to self-organization effects during the growth process, the ZrO2 layer shows small, periodic thickness variations on micrometer length scales near the sample edges. The measured capacitance data and derived oxide charge densities show the same periodicity as the thickness variations. The magnitude of the change of the oxide charge density, however, cannot be explained by the small thickness variations and is attributed to a local periodic change of the growth dynamics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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