Anisotropy and thermal properties in GeTe semiconductor by Raman analysis.
| Autor: | Yang, Shuai, Sui, Fengrui, Liu, Yucheng, Qi, Ruijuan, Feng, Xiaoyu, Dong, Shangwei, Yang, Pingxiong, Yue, Fangyu |
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| Zdroj: | Nanoscale; 8/28/2023, Vol. 15 Issue 32, p13297-13303, 7p |
| Databáze: | Complementary Index |
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