| Autor: |
Ho, Wan Ying, Chow, Yi Chao, Biegler, Zachary, Qwah, Kai Shek, Tak, Tanay, Wissel-Garcia, Ashley, Liu, Iris, Wu, Feng, Nakamura, Shuji, Speck, James S. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/7/2023, Vol. 123 Issue 6, p1-6, 6p |
| Abstrakt: |
Atomic layer etching (ALE) was performed on (Al, In, Ga)N thin films using a cyclic process of alternating Cl2 gas absorption and Ar+ ion bombardment in an inductively coupled plasma etcher system. The etch damage was characterized by comparing photoluminescence of blue single quantum well light-emitting diodes before and after the etch as well as bulk resistivities of etched p-doped layers. It was found that etched surfaces were smooth and highly conformal, retaining the step-terrace features of the as-grown surface, thus realizing ALE. Longer exposures to the dry etching increased the bulk resistivity of etched surfaces layers slightly, with a damaged depth of ∼55 nm. With further optimization and damage recovery, ALE is a promising candidate for controlled etching with atomic accuracy. It was found that Al0.1Ga0.9N acts as an etch barrier for the ALE etch, making it a suitable etch to reveal buried V-defects in III-nitride light emitting diodes. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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