| Autor: |
Ning, Zhian, Dong, Hailiang, Jia, Zhigang, Jia, Wei, Liang, Jian, Xu, Bingshe |
| Předmět: |
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| Zdroj: |
AIP Advances; Jul2023, Vol. 13 Issue 7, p1-7, 7p |
| Abstrakt: |
A n-GaAsSb single waveguide layer semiconductor laser with an InP/In0.55Ga0.45As/AlGaAs asymmetrical barrier is designed in order to improve output power, which not only reduces optical loss in the p-region but also effectively suppresses carrier leakage. The results show that a GaAsSb single waveguide structure almost completely shifts the optical field to the n-region, which reduces the absorption of photons by holes. When the injected current is 1 A, the device's optical loss decreases from 15.60 to 13.20 cm−1. Ensuring that carrier leakage and internal quantum efficiency are almost unaffected, the InP/In0.55Ga0.45As/AlGaAs asymmetric barrier makes optical loss further reduce. The power of the new-structure device is 0.74 W, and its wall-plug efficiency reaches 70.84%. This structure design will provide both experimental data and theoretical support for the growth of the epitaxial structure of InP-based 1550 nm semiconductor lasers. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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