| Autor: |
Twigg, M. E., Stahlbush, R. E., Irvine, K. G., Sumakeris, J. J., Chow, T. P., Lossee, P. A., Zhu, L. |
| Předmět: |
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| Zdroj: |
Journal of Electronic Materials; Apr2005, Vol. 34 Issue 4, p351-356, 6p, 8 Black and White Photographs, 1 Diagram, 1 Chart |
| Abstrakt: |
Using plan-view transmission electron microscopy (PVTEM), we have identified stacking faults (SFs) and planar defects in 4H-SiC PiN diodes subjected to electrical bias. Our observations suggest that not all planar defects seen in the PiN diodes are SFs. By performing diffraction-contrast imaging experiments using TEM, we can distinguish SFs from other planar defects. In addition, high-resolution TEM (HRTEM) imaging and analytical TEM have revealed that some planar defects consist of a 3-nm-wide SiC amorphous layer. Many of these planar defects are orientated parallel to {1100} planes, whereas others are roughly parallel to the (0001) plane. The appearance of these planar defects suggests that they are grain boundaries. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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