Epitaxial growth and properties of MoOx(2
Autor: Bhosle, V., Tiwari, A., Narayan, J.
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Zdroj: Journal of Applied Physics; 4/15/2005, Vol. 97 Issue 8, p083539, 6p, 3 Black and White Photographs, 1 Chart, 6 Graphs
Abstrakt: We report the growth of epitaxial molybdenum oxide (MoOx,22 phase and showed an unusual combination of high conductivity and high transmittance in the visible region after annealing. The unusual combination of these properties was realized by systematically controlling the relative fraction of different oxidation states of molybdenum, namely Mo4+, Mo5+, and Mo6+ in the monoclinic phase. For a film 60 nm thick and annealed at 250 °C for 1 h, the ratio of Mo6+/(Mo4++Mo5+) was determined to be ∼2.9/1 using XPS, and a typical value of transmittance was ∼65% and resistivity close to 1×10-3 Ω cm. These results demonstrate growth of epitaxial MoOx films with tunable electrical and optical properties. Further optimization of these properties is expected to result in applications related to display panels, solar cells, chromogenic (photochromic, electrochromic, gasochromic) devices, and transparent conducting oxides. Our ability to grow epitaxial MoOx films can further aid their integration with optoelectronic and photonic devices. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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