A compact composite transistor as a novel RF power cell for high-linearity power amplifiers.

Autor:	Huai Gao, Haitao Zhang, Huinan Guan, Li-Wu Yang, Li, G. P.
Předmět:	POWER amplifiers ELECTRONIC amplifiers TRANSISTORS ELECTRIC impedance ELECTRICITY
Zdroj:	Microwave & Optical Technology Letters; 6/20/2005, Vol. 45 Issue 6, p483-485, 3p, 1 Diagram, 2 Graphs
Abstrakt:	A novel composite transistor consisting of an inverted transistor parallel-connected to a standard RF power transistor is implemented to improve the linearity of the power amplifier. The inverted transistor facilitates the predistortion and feedback functions. The P1dB output power and IP3 of the composite transistor PA are increased by 5 and 7 dB, respectively. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 45: 483–485, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20859 [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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