Gate voltage dependent mobility of oligothiophene field-effect transistors.
| Autor: | Horowitz, Gilles, Hajlaoui, Riadh |
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| Zdroj: | Journal of Applied Physics; 3/15/1999, Vol. 85 Issue 6, p3202, 5p, 1 Diagram, 2 Charts, 4 Graphs |
| Abstrakt: | Offers information on a study which examined the systematic study of the gate bias dependence of the field-effect mobility in three oligothiophenes. How the study was conducted; Contact resistance of the transistors; Gate voltage dependent mobility. |
| Databáze: | Complementary Index |
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