| Autor: |
Mitate, Toshitsugu, Mizuno, Seiichiro, Takahata, Hiroko, Kakegawa, Ryu, Matsuoka, Takashi, Kuwano, Noriyuki |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 3/28/2005, Vol. 86 Issue 13, p134103, 3p, 4 Diagrams |
| Abstrakt: |
To establish an accurate determination technique for the polarity of InN by convergent-beam electron diffraction sCBEDd, we clarified the influence of the electron incidence direction, film thickness, and the temperature factor B on CBED patterns by simulation. The electron incidence direction of [1100] and a film thinner than 50 nm were found to be preferable for easy and reliable polarity determination. Using an InN film grown on a (0001) GaN template on (0001) sapphire by metalorganic vapor-phase epitaxy, observation of the CBED pattern in the thin region of the film was confirmed from the simulation result. This InN film was clearly determined to have N polarity and the value of B was estimated to be less than [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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