| Autor: |
Jeon, H. S., Dixit, P. S., Yim, H. |
| Předmět: |
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| Zdroj: |
Journal of Chemical Physics; 3/8/2005, Vol. 122 Issue 10, p104707, 12p, 4 Diagrams, 1 Chart, 11 Graphs |
| Abstrakt: |
Various characteristics of dewetting of thin polystyrene (PS) films absorbed on highly cross-linked epoxy-coated and silicon oxide covered substrates are studied as a function of PS film thickness (20hc1 whereas the spinodal dewetting (SD) occurs through the growth of surface undulations for hc1, where hc1 is ∼4Rg. For an epoxy-coated substrate, the NG mechanism is observed for h>hc2 while the SD mechanism is observed for hc2, where hc2 is ∼6Rg. We demonstrate that the highly cross-linked epoxy-coated silicon substrate leads to retardation of the PS film dewetting in comparison to the silicon oxide covered silicon substrate. Moreover, we confirm that the epoxy-coated substrate leads to a significant decrease in the fraction of dewetted area at the apparent equilibrium stage of dewetting due to the anchoring effect of PS molecules caused from the cross-linked networks of the epoxy layer. In contrast the retardation effect of the epoxy-coated substrate on the rate of dewetting is more remarkable for relatively thinner PS films (h<∼800 Å) than thicker films (∼800
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| Databáze: |
Complementary Index |
| Externí odkaz: |
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