SiGe Bipolar Phototransistor Model for Multiple Bias Points and Opto-Microwave Gain Analysis.

Autor: Diop, A. M., Polleux, J.-L., Algani, C., Mazer, S., Thary, V., Fattah, M., EL Bekkali, M.
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Zdroj: International Journal of Microwave & Optical Technology; Jul2023, Vol. 18 Issue 4, p453-462, 10p
Abstrakt: In this article, we have developed a new model for heterojunction bipolar phototransistors (HPTs). We revolutionize microwave photonics (MWP) circuit design, reducing costs. Using a large signal model, our electrical model enables versatile operation at different bias points. Simulations show remarkable accuracy, with excellent fit to measured S-parameters. Based on the Eber-Moll approach, our model offers computational efficiency and modularity, distinguishing it from complex models like MEXTRAM or HICUM. Incorporating LC circuits and junction capacitors enables precise adaptation of multiple bias points in a single model, surpassing previous structures modeling Telefunken GmbH 80-GHz technology. Validation with actual HPT measurements confirms dynamic gain and S-parameter correspondence. Our HPT exhibits notable opto-microwave gain and sensitivity. Our proposed model's versatility and efficiency make it suitable for designing various functions in photonic-controlled integrated circuits. With improved accuracy and adaptability, our work represents a significant advancement in HPT design for MWP circuits. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index