| Autor: |
Touse, M. P., Karunasiri, G., Lantz, K. R., Li, H., Mei, T. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/28/2005, Vol. 86 Issue 9, p093501, 3p, 1 Diagram, 3 Graphs |
| Abstrakt: |
A dual-band multiple-quantum-well infrared photodetector capable of simultaneously detecting wavelengths near 0.9 μm and 10 μm has been fabricated using GaAs/InGaAs step quantum wells. The detection of the near (0.82–0.95 μm)- and mid (9–11 μm)-infrared wavelength bands was achieved using interband and intersubband transitions. The measured peak responsivities of the near- and mid-infrared bands were 0.4 A/W and 1 A/W, respectively, at 0.8 V bias across the device. The broken symmetry of the step quantum well allows transitions from the ground states of heavy and light holes to the first-excited electron state allowing the photoexcited carriers to be efficiently collected. The estimated values of the detectivities for near- and mid-infrared bands at 40 K and 0.8 V bias are approximately 4.5×109 cm(Hz)1/2/W and 1.1×1010 cm(Hz)1/2/W, respectively. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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