| Autor: |
Gudlavalleti, Raja Hari, Goosen, Jacques, Liu, Tao, Bradley, Hunter, Parent, Elisa, Almalki, Abdulmajeed, Perez, Erik, Jain, Faquir |
| Předmět: |
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| Zdroj: |
International Journal of High Speed Electronics & Systems; Jun-Dec2023, Vol. 32 Issue 2-4, p1-6, 6p |
| Abstrakt: |
This paper presents fabrication of multi-state inverters incorporating SiOx-cladded Si quantum dot in the channel and gate region of driver, load, and access transistors. Experimental characteristics are presented exhibiting 3-state behavior in Quantum-dot Channel (QDC)-Quantum-dot Gate (QDG) FETs having Si quantum dots. It is shown that QDC-QDG-FETs-based enhancement mode inverter configurations are the building blocks of a multi-bit static random access memory (SRAM). QDC-QDG-FETs exhibiting four states can also be used to implement compact 4-state logic and nonvolatile memories or random access nonvolatile memories. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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