Critical Disorder in InGaN/GaN Resonant Bragg Structures.

Autor: Ivanov, A. A., Chaldyshev, V. V., Ushanov, V. I., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F.
Zdroj: Bulletin of the Russian Academy of Sciences: Physics; Jun2023, Vol. 87 Issue 6, p853-856, 4p
Abstrakt: We studied an effect of spatial disorder on the optical response of resonant Bragg structures with InGaN quantum wells. Using an experimentally verified model, we calculated a transformation of the optical reflection from the resonant Bragg structures with 60, 100, and 200 quantum wells as a function of the degree of disorder in the system. A critical threshold deviation from the exact periodicity was revealed, which causes a qualitative change of the optical resonance. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index