Contribution from the Electronic States at Interfaces to Terahertz Photoconductivity in Structures Based on Hg1 –xCdxTe with an Inverted Energy Spectrum.

Autor: Kazakov, A. S., Galeeva, A. V., Artamkin, A. I., Ikonnikov, A. V., Chmyr, S. N., Dvoretskiy, S. A., Mikhailov, N. N., Bannikov, M. I., Danilov, S. N., Ryabova, L. I., Khokhlov, D. R.
Zdroj: Bulletin of the Russian Academy of Sciences: Physics; Jun2023, Vol. 87 Issue 6, p739-743, 5p
Abstrakt: An experimental study is performed of the differences between the electronic states necessarily formed at the boundaries of a topological phase in a vacuum and a trivial buffer in the regions of heterojunction in topological materials based on Hg1 –xCdxTe epitaxial films. It is shown that the PT-symmetric terahertz photoconductivity observed in the specified structures is due precisely to states in the region of topological film/trivial buffer (or cap layer) interfaces. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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