Room-Temperature Ferromagnetism in the Crystalline Semiconductor Compound Hg1 –xFexSe (x ≤ 0.06 at %) with an Ultralow Iron Impurity Concentration.

Autor:	Govorkova, T. E., Okulov, V. I., Pamyatnykh, E. A., Gaviko, V. S., Surikov, V. T.
Zdroj:	Bulletin of the Russian Academy of Sciences: Physics; Jun2023, Vol. 87 Issue 6, p735-738, 4p
Abstrakt:	Experiments reveal a new type of high-temperature ferromagnetism in the donor impurity electron system of Hg1 − xFexSe (х ≤ 0.06 at %) single crystals with an ultralow concentration of iron impurities at room temperature (T = 300 K). [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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