Optimization of ultra-thin CIGS-based solar cells by strained In1−xGaxAs absorption layer: 1D SCAPS modeling.

Autor: Tarbi, A., Chtouki, T., Sellam, M. A., Benahmed, A., El Kouari, Y., Erguig, H., Migalska-Zalas, A., Goncharova, I., Taboukhat, S.
Zdroj: Journal of Computational Electronics; Aug2023, Vol. 22 Issue 4, p1089-1096, 8p
Abstrakt: In this study, we investigated the optoelectronic behavior of In1−xGaxAs alloy epitaxy on a GaAs substrate by varying the chemical composition of gallium. We studied the impact of the elastic deformation generated by the lattice mismatch between the material and substrate on the bandgap energy and absorption coefficient. The hydrostatic pressure and temperature were considered. Our aim was to show that this constraint can also contribute to widening the bandgap range. The results were exploited to optimize the efficiency of solar cells based on copper indium gallium (di) selenide Cu (In, Ga) Se2 (CIGS) using an InGaAs absorbent layer, which must be strained to minimize the cost of the cell by reducing the Ga (x) content. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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