| Autor: |
Smart, Thomas J., Hensling, Felix V. E., Kim, Dong Yeong, Majer, Lena N., Suyolcu, Y. Eren, Dereh, Dominik, Schlom, Darrell G., Jena, Debdeep, Mannhart, Jochen, Braun, Wolfgang |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jul2023, Vol. 41 Issue 4, p1-6, 6p |
| Abstrakt: |
Aluminum plays a central role in the world of electronic oxide materials. Yet, aluminum sources are very difficult to handle during oxide molecular-beam epitaxy, the main reason for which is the high oxidization potential of aluminum. In this work, we present a thorough study of the behavior of aluminum sources during oxide thermal laser epitaxy. We identify two distinct operating regimes. At high laser-beam fluences, the source emanates reproducible fluxes independent of an applied oxygen pressure of < 10 − 1 hPa. At lower beam fluences, the flux increases with increasing oxygen pressure (< 10 − 1 hPa) due to suboxide formation. We demonstrate reproducible rate control over a flux range of 5 orders of magnitude, which can be expanded further. These results demonstrate that thermal laser epitaxy does not present the challenges associated with the evaporation of aluminum during oxide molecular-beam epitaxy. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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