Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor.

Autor:	Tsunvaza, D., Ryzhuk, R. V., Vasil'evskii, I. S., Kargin, N. I., Klokov, V. A.
Předmět:	MODULATION-doped field-effect transistors GALLIUM arsenide transistors INDIUM gallium arsenide METAL semiconductor field-effect transistors
Zdroj:	Russian Microelectronics; Jun2023, Vol. 52 Issue 3, p160-166, 7p
Abstrakt:	This paper studies the design of a nonlinear model of AlGaAs/InGaAs/GaAs рHEMT microwave-frequency range transistors with a gate length of 0.15 µm using parametric analysis methods. In the calculations, not only nonlinear current sources but also the dependences of the nonlinear gate-source and gate-drain capacitances on voltages are studied. It is shown that the proposed model makes it possible to describe the IV characteristics of the studied device adequately in the range of drain currents from 0 to 100 mA and the frequency range from 5 to 45 GHz. The error of the model does not exceed 3%. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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