| Autor: |
Kessler-Lewis, Emily S., Polly, Stephen J., Nelson, George T., Slocum, Michael A., Pokharel, Nikhil, Ahrenkiel, Phil, Hubbard, Seth M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/28/2023, Vol. 133 Issue 24, p1-10, 10p |
| Abstrakt: |
GaSb grown on GaAs through interfacial misfit (IMF) arrays grown via molecular beam epitaxy has been heavily studied; there is limited research, however, on IMF growth through metal-organic vapor phase epitaxy. To demonstrate viability for integration in a multijunction solar cell for terrestrial use, it is imperative to demonstrate high quality GaSb grown on GaAs through metal-organic vapor phase epitaxy. The preferred gallium precursors for n-type and p-type GaSb for longest minority carrier diffusion length were determined to be trimethylgallium and triethylgallium, respectively. A heteroepitaxial GaSb-on-GaAs device attained an open-circuit voltage of 190 mV and an efficiency of 2.2%. Extracted threading dislocation density from the minority carrier lifetime for the heteroepitaxial GaSb-on-GaAs device was determined to be 7.5 × 10 6 cm − 2 . In a modeled multijunction solar cell, this device attributes to an overall efficiency of 33.1% under AM1.5g illumination. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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