| Autor: |
Symonds, C., Toanen, V., Gassenq, A., Benoit, J.-M., Pereira, A., Cleyet-Merle, E., Fulcrand, R., Bessueille, F., Minot, S., Morassi, M., Lemaitre, A., Bellessa, J. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/26/2023, Vol. 122 Issue 26, p1-5, 5p |
| Abstrakt: |
In this Letter, we describe a fabrication process for current injection into micrometer-size Ag/GaAs Tamm emitting diodes. It requires a special care to minimize surface damages as the Tamm mode is localized very close to the surface. Electroluminescence from GaAs quantum wells is demonstrated at room temperature, with a dispersion that follows the Tamm mode. For small diameters Tamm structures, in-plane confinement leads to electroluminescence into discretized energy modes. The observation of electrically excited emission from a confined diode is an important step toward the development of Tamm plasmon optical devices with new functionalities. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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