| Autor: |
Michailovska, K. V., Indutnyi, I. Z., Shepeliavyi, P. E., Sopinskyy, M. V., Dan’ko, V. A., Yukhymchuk, V. O. |
| Předmět: |
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| Zdroj: |
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2023, Vol. 26 Issue 1, p68-75, 8p |
| Abstrakt: |
ncs-Si–SiOx:Sm structures formed by high-temperature air annealing of the SiOx films doped with samarium during thermal co-evaporation in vacuum of silicon monoxide and metallic Sm was studied. By measuring the spectra of photoluminescence (PL), it has been shown that doping of SiOx films with Sm stimulates their decomposition into Si and SiO2, and also reduces the transition temperature of silicon nanoparticle from the amorphous state to the crystalline one. With an increase in the impurity content up to 2 wt.%, along with the ncs-Si luminescence, the PL spectrum exhibits emission bands of Sm3+ and Sm2+ ions, which do not appear at a lower Sm concentration. The presence of silicon nanocrystals in SiOx films doped with Sm and annealed at 970 °C in air has been confirmed using Raman scattering spectra. A possible mechanism for interaction of samarium ions with the SiOx matrix and ncs-Si has been discussed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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