| Autor: |
Panchanan, Suparna, Maity, Reshmi, Baidya, Achinta, Maity, Niladri Pratap |
| Zdroj: |
SILICON (1876990X); Jun2023, Vol. 15 Issue 9, p3883-3895, 13p |
| Abstrakt: |
A compact Lambert W function-based model is proposed to analyze the drain current of three different fin-shaped Trigate (TG) FinFETs, namely rectangular (RE_TG), trapezoidal (TZ_TG) and triangular (TI_TG) FinFET. Quantum mechanical effect (QME), channel length modulation (CLM), effective mobility, corner effect and modified drain voltage are included to achieve precise drain current in all operating regimes. The comparison between the three cross-sections is examined in connection with threshold voltage, drain current, output conductance and transconductance. Better performance regarding drain induced barrier lowering (DIBL), subthreshold swing (S S) and threshold voltage roll-off is noticed for TI_TG FinFET. Maximum drive current I on is observed for RE_TG FinFET. The effect of HfO2 is also addressed in the cross-sections described above. The prediction of the mathematical model is authenticated using technology computer-aided design (TCAD). The outcome of the model is also compared with the fabrication result. An outstanding harmony with the TCAD simulation and the published experimental result verifies the potentiality of this model. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Full text from SpringerLink