| Autor: |
Eshraghi, K., Natani, S., Bandaru, P. R. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/5/2023, Vol. 122 Issue 23, p1-5, 5p |
| Abstrakt: |
It is shown that the electrical transport in quantum dot (QD) constituted films, synthesized through electrochemical doping, could be described through a two-step model considering (i) the tunneling transport of electrons from an electron source, and subsequent (ii) Ohmic transport through the film governed by a temperature (T) dependent mobility (μ), varying as T−α. A transfer matrix algorithm based approach for electrical field induced tunneling and α ∼ 1, was used. The indicated modeling principles could be deployed to predict the current–voltage characteristics of QD films and assemblies coupled to metallic electrodes. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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