| Autor: |
Patil, Sumit R., Borokar, Vaibhav Y., Rasadujjaman, Md., Zhang, Jing, Ding, Shi J., Mahajan, Ashok M. |
| Zdroj: |
Journal of Materials Science: Materials in Electronics; Jun2023, Vol. 34 Issue 16, p1-8, 8p |
| Abstrakt: |
ZrO2/La2O3/ZrO2/La2O3/ZrO2 (ZLZLZ) Penta-layered nanolaminates, which were deposited by an indigenously developed plasma-enhanced atomic layer deposition (ID-PEALD) system, sandwiched between the thermally evaporated Aluminum (Al) top electrode and RF-sputtered Titanium (Ti) bottom electrode have been investigated for the metal–insulator–metal (MIM) capacitors. In this work, the MIM capacitors were fabricated using ID-PEALD with their respective precursors and O2 plasma. The lowest RMS surface roughness of 0.2624 nm has been determined by atomic force microscopy (AFM). The pyrochlore formation of ZLZLZ nanolaminates was investigated by X-ray photoelectron spectroscopy. The post-deposition annealing by muffle furnace was employed on the ZLZLZ nanolaminates at 400°C. The lowest leakage current density of 9.70 × 10− 7 A/cm2 at 1 V has been achieved and a low barrier height of 0.12 eV has been calculated from ln(J) versus E1/2. High capacitance in the range of 30.5 fF/µm2 was achieved with the minimal leakage current at 1 V targeting to meet the ITRS projections for 2023. These nanolaminates provide a high dielectric constant (κ) of ~ 33 and a lower equivalent oxide thickness (EOT) of 0.5446 nm. These results suggest that the MIM capacitors fabricated by ID-PEALD deposited high-k nanolaminates are suitable to be used for memory applications in the future. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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