| Autor: |
Ahmad, Nazir, Vakil, G. B. |
| Zdroj: |
Journal of Materials Science: Materials in Electronics; Jun2023, Vol. 34 Issue 16, p1-12, 12p |
| Abstrakt: |
In the present study, we address the growth and characterization of rubidium hydrogen tartrate single crystals through the gel encapsulation route. The optimal conditions for the growth of these crystals are determined. The flat nature of habit faces is demonstrated through optical microscopy, with the most discernible being (100). The crystallographic findings demonstrate that the established crystals belong to an orthorhombic crystal system with space group P212121. Oak Ridge thermal ellipsoid plot and packing diagrams illustrate that the compound possesses an extended 3-D framework, which is stabilized by an extensive framework of hydrogen bonding. HRXRD results ensure crystalline perfection. The Tauc relation conduces to a band gap of 5.3 eV, followed by the direct forbidden transitions. Dielectric characteristics along (100) crystallographic planes confirm the compound’s typical ferroelectricity, which is also corroborated by thermal and polarization versus electric field assessments. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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