| Autor: |
Choi, Wonyeong, Jin, Bo, Shin, Seonghwan, Do, Jeonghyeon, Son, Jongmin, Kim, Kihyun, Lee, Jeong-Soo |
| Předmět: |
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| Zdroj: |
Biosensors (2079-6374); May2023, Vol. 13 Issue 5, p565, 9p |
| Abstrakt: |
We experimentally demonstrate Si-based electrolyte-gated transistors (EGTs) for detecting urea. The top-down-fabricated device exhibited excellent intrinsic characteristics, including a low subthreshold swing (SS) (~80 mV/dec) and a high on/off current ratio (~107). The sensitivity, which varied depending on the operation regime, was analyzed with the urea concentrations ranging from 0.1 to 316 mM. The current-related response could be enhanced by reducing the SS of the devices, whereas the voltage-related response remained relatively constant. The urea sensitivity in the subthreshold regime was as high as 1.9 dec/pUrea, four times higher than the reported value. The extracted power consumption of 0.3 nW was extremely low compared to other FET-type sensors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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