| Autor: |
Bordun, О. М., Bordun, B. О., Kukharskyy, I. Yo., Medvid, I. I., Maksymchuk, D. М., Tsapovska, Zh. Ya., Leonov, D. S. |
| Předmět: |
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| Zdroj: |
Nanosistemi, Nanomateriali, Nanotehnologii; 2023, Vol. 21 Issue 1, p49-55, 7p |
| Abstrakt: |
The presence of photoconductivity in thin films of β-Ga2O3 and β- Ga2O3:Cr3+ obtained by radio-frequency (RF) ion-plasma sputtering after heat treatment in air has been established. The obtained photoconductivity spectra are analysed, and it is shown that the photoconductivity in pure thin β-Ga2O3 films is due to intrinsic photoconductivity because of the band–gap electronic transitions. In thin β-Ga2O3:Cr3+ films, in addition to this photoconductivity band, there are also three photoconductivity bands observed due to electronic transitions within the Cr3+ activator ion. At the same time, all three excited levels fall into the conduction band and lead to the appearance of U-, Y-, and V-bands of photoconductivity. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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