| Autor: |
Vlasov, V. N., Strelov, V. I., Korobeynikova, E. N. |
| Zdroj: |
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Apr2023, Vol. 17 Issue 2, p388-391, 4p |
| Abstrakt: |
The effect of vibrations of growth equipment on the homogeneity of doped semiconductor single crystals grown using directional crystallization is studied in ground-based experiments under conditions of weak convective flows. The studies carried out are based on theoretical calculations and experimental results on the growth of Ga-doped Ge crystals, during the crystallization of which convective processes of various intensities are simulated including those close to microgravity conditions. Measurement of the inhomogeneity of the distribution of the dopant along the length of the crystals is carried out using the micro-thermoelectric-power method developed and tested by the authors (method of in-process monitoring), which makes it possible to avoid, among other things, the problem of the influence of the charge-carrier mobility on the measurement results. It is shown that vibrations of the growth equipment lead to an increase in the intensity of convective processes and, accordingly, to a deterioration in the uniformity of the dopant distribution along the length of the crystal. It is established that in order to obtain highly homogeneous semiconductor crystals, both in terrestrial and microgravity conditions, the crystallization process must be carried out by controlling the thermal field without mechanical movement of the samples. The greatest significant effect of vibrations will be observed for microgravity conditions, where the microgravity sensitivity of doped melts to external influences greatly increases. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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