Change in the Charge State of MOS Structures with a Radiation-Induced Charge under High-Field Injection of Electrons.

Autor: Andreev, D. V., Bondarenko, G. G., Andreev, V. V.
Zdroj: Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Feb2023, Vol. 17 Issue 1, p48-53, 6p
Abstrakt: The influence of high-field electron injection modes on the charge state and defectiveness of metal–oxide–semiconductor (MOS) structures after irradiation is studied. It is shown that to remove the radiation-induced positive charge accumulated in the SiO2 film of MOS structures, it is necessary to apply the high-field Fowler–Nordheim tunneling injection of electrons in an electric field that do not cause hole generation. It is established that removing the radiation-induced positive charge in the SiO2 film of a MOS structure and the generation of new interface traps are mainly determined by the magnitude of the charge injected into the dielectric. It is found that, upon the annihilation of holes trapped in SiO2 as a result of interaction with injected electrons, a significant increase in the number of interface traps is observed, which significantly exceeds the number of interface traps arising upon the annealing of a radiation-induced positive charge at room temperature. A model is proposed that describes the annihilation of a radiation-induced positive charge upon interaction with injected electrons. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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