| Autor: |
Kirilenko, Pavel, Najmi, Mohammed A., Ma, Bei, Shushanian, Artem, Velazquez-Rizo, Martin, Iida, Daisuke, Ohkawa, Kazuhiro |
| Předmět: |
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| Zdroj: |
AIP Advances; Apr2023, Vol. 13 Issue 4, p1-6, 6p |
| Abstrakt: |
We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality. The x-ray rocking curve measurements showed that (000 2 ̄ ) and (10–1–2) peaks full widths at half-maximum are as good as 384 and 481 arcsec, respectively. The calculated threading dislocations densities are as low as 2.9 × 108 and 1.6 × 109 cm−2 in the case of screw-type and edge-type dislocations, respectively. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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