| Autor: |
Kumar, Pawan, Sarkar, Prosenjit, Nisha, Katiyar, Ram S. |
| Zdroj: |
Indian Journal of Physics; May2023, Vol. 97 Issue 5, p1417-1435, 19p |
| Abstrakt: |
In the present work, CdSe thin film has been deposited on indium tin oxide (ITO)-coated glass substrate by the pulsed laser deposition (PLD) technique. Temperature-dependent current–voltage and capacitance–voltage characterization approaches are used to study the influence of post-deposition heat treatment (at temperatures of 150, 250, and 350 °C) on electrical properties. It is observed that the zero-bias barrier height and the ideality factor are substantially temperature dependent. The Mott–Schottky plot confirmed that the prepared CdSe thin film is an n-type semiconductor. The bandgap is estimated from the absorption data of the UV–Vis spectrometer using Tauc's plot. This paper provides a thorough explanation of how electronic energy level diagram of the CdSe thin film on ITO-coated glass substrate was determined. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Full text from SpringerLink