| Autor: |
Yang, Kaining, Gao, Xiang, Wang, Yaning, Zhang, Tongyao, Gao, Yuchen, Lu, Xin, Zhang, Shihao, Liu, Jianpeng, Gu, Pingfan, Luo, Zhaoping, Zheng, Runjie, Cao, Shimin, Wang, Hanwen, Sun, Xingdan, Watanabe, Kenji, Taniguchi, Takashi, Li, Xiuyan, Zhang, Jing, Dai, Xi, Chen, Jian-Hao |
| Zdroj: |
Nature Communications; 4/14/2023, Vol. 14 Issue 1, p1-10, 10p |
| Abstrakt: |
The realization of graphene gapped states with large on/off ratios over wide doping ranges remains challenging. Here, we investigate heterostructures based on Bernal-stacked bilayer graphene (BLG) atop few-layered CrOCl, exhibiting an over-1-GΩ-resistance insulating state in a widely accessible gate voltage range. The insulating state could be switched into a metallic state with an on/off ratio up to 107 by applying an in-plane electric field, heating, or gating. We tentatively associate the observed behavior to the formation of a surface state in CrOCl under vertical electric fields, promoting electron–electron (e–e) interactions in BLG via long-range Coulomb coupling. Consequently, at the charge neutrality point, a crossover from single particle insulating behavior to an unconventional correlated insulator is enabled, below an onset temperature. We demonstrate the application of the insulating state for the realization of a logic inverter operating at low temperatures. Our findings pave the way for future engineering of quantum electronic states based on interfacial charge coupling.Here, the authors report evidence of unconventional correlated insulating states in bilayer graphene/CrOCl heterostructures over wide doping ranges and demonstrate their application for the realization of low-temperature logic inverters. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Full text from SpringerLink