Preparing Thin Gallium Sulphide Films via PECVD and Studying Their Properties.

Autor: Mochalov, L. A., Kudryashov, M. A., Logunov, A. A., Vshivtsev, M. A., Prokhorov, I. O., Vorotyntsev, V. M., Malyshev, V. M., Sazanova, T. S., Kudryashova, Yu. P., Bulanov, E. N., Knyazev, A. V.
Zdroj: Russian Journal of Physical Chemistry; Jan2023, Vol. 97 Issue 1, p241-247, 7p
Abstrakt: Thin films of GaSх are obtained via plasma-enhanced chemical vapor deposition (PECVD) for the first time, while high-purity volatile derivatives of the corresponding macrocomponents (gallium chloride (GaCl3) and hydrogen sulfide (H2S)) are used as the initial materials. It is found that the nonequilibrium low-temperature plasma of an HF discharge (40.68 MHz) at a reduced pressure (0.01 Torr) is the initiator of chemical transformations. Components of reactive plasma formed in the gas phase are studied via optical emission spectroscopy (OES). Structural and electrophysical properties of the obtained materials are studied as well. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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