Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance.
| Autor: | Nagano, F., Inoue, F., Phommahaxay, A., Peng, L., Chancerel, F., Naser, H., Beyer, G., Uedono, A., Beyne, E., De. Gendt, S., Iacovo, S. |
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| Zdroj: | ECS Journal of Solid State Science & Technology; Mar2023, Vol. 12 Issue 3, p1-8, 8p |
| Databáze: | Complementary Index |
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