DC Characterization and High-Frequency Performance Analysis of a GaN/AlGaN HET on a β-Ga2O3 Substrate.

Autor:	S., Anju, Jacob, Biji, Paul, Geenu, Suresh Babu, V.
Předmět:	MODULATION-doped field-effect transistors FREQUENCIES of oscillating systems GALLIUM nitride BAND gaps RADIO frequency
Zdroj:	IETE Journal of Research; Mar2023, Vol. 69 Issue 3, p1460-1465, 6p
Abstrakt:	In this paper, an AlGaN/GaN heterojunction transistor on a wide band gap material substrate is designed and simulated with Silvaco TCAD software. The substrate material used in this work is β gallium oxide(β-Ga2O3). The cutoff frequency and maximum oscillation frequency of the device extracted are 82 and 360 GHz, respectively, which are better compared to those of recently reported works. These values of fT and fmax prove that the proposed high electron mobility transistor is suitable for radio frequency applications. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Plný text ve formátu HTML
Nepřihlášeným uživatelům se plný text nezobrazuje	K zobrazení výsledku je třeba se přihlásit.