| Autor: |
Saidov, A. S., Saparov, D. V., Usmonov, Sh. N., Razzakov, A. Sh., Kalanov, M. |
| Předmět: |
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| Zdroj: |
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics; 6/10/2023, Vol. 37 Issue 14, p1-9, 9p |
| Abstrakt: |
In this work, the physical features of growing epitaxial layers of new solid solutions of (GaAs) 1 − y − z (Ge 2 ) y (ZnSe) z from the liquid phase of the tin solution-melt on GaAs (100) substrates were investigated. The conditions required for the formation of the solid solution of molecular substitution were revealed. A possible configuration of the crystal structure of the solid solution (GaAs) 1 − y − z (Ge 2 ) y (ZnSe) z is presented. In the spectral photosensitivity of the n -GaAs– p -(GaAs) 1 − y − z (Ge 2 ) y (ZnSe) z structures, peaks with maxima at photon energies of 1.37 eV and 2.62 eV were found. The band diagram of the solid solution (GaAs) 1 − y − z (Ge 2 ) y (ZnSe) z was presented. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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