| Autor: |
Zhaojun Su, Dacheng Xu, Qing Ma, Kun Gao, Cheng Zhang, Chunfang Xing, Shibo Wang, Wei Shi, Xinyu Wang, Kun Li, Jingshu Hui, Xinbo Yang |
| Předmět: |
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| Zdroj: |
Solar RRL; Feb2023, Vol. 7 Issue 3, p1-11, 11p |
| Abstrakt: |
High-quality electron transport layer (ETL) is a prerequisite for high-performance wide-bandgap mixed-halide perovskite solar cells (PSCs), which is critical for efficient perovskite/silicon tandem solar cells. Herein, an atomic layer deposited ZnO-SnO2 bilayer ETL for wide-bandgap PSCs is reported, featuring a high uniformity and conformality over a large area. The ZnO-SnO2 bilayer shows a matched band alignment with wide-bandgap perovskite for efficient electron extraction and transport, with a lower nonradiative recombination. As a result, a champion power conversion efficiency of 18.1% is achieved on the ZnO-SnO2 bilayer-based wide-bandgap PSCs featuring an ultrahigh open-circuit voltage (Voc) of 1.233 V, which is the highest value for wide-bandgap PSCs without any surface passivation. In addition, the atomic layer deposition ZnO-SnO2 bilayer exhibits very good surface passivation and conformality on crystalline silicon surfaces, which makes it attractive to be applied for perovskite/silicon tandem solar cells with a higher Voc and textured surfaces. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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