| Autor: |
Dussart, R., Ettouri, R., Nos, J., Antoun, G., Tillocher, T., Lefaucheux, P. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/21/2023, Vol. 133 Issue 11, p1-9, 9p |
| Abstrakt: |
Cryogenic etching of a-Si, SiO2, and Si3N4 materials by CHF3/Ar inductively coupled plasma is investigated in a range of temperature from −140 to +20 °C. Samples of the three different materials are placed together on the same silicon carrier wafer. Depending on the experimental conditions, etching or deposition regimes were obtained on the samples. The thickness variation was measured by spectroscopic ellipsometry. A process window between −120 and −80 °C was found in which the Si3N4 surface is etched while CFx deposition is obtained on a-Si and SiO2 surfaces, resulting in the infinite etching selectivity of Si3N4 to the other materials. At high enough self-bias (−120 V) and very low temperature (<−130 °C), Si3N4 etch is reduced down to a very low value, while a-Si and SiO2 are still being etched, which inverses the selectivity between Si3N4 and the two other materials. EDX analyses of a Si3N4/a-Si/SiO2 layer stack after the same etching process carried out at 20 and −100 °C confirm the presence of carbon and fluorine on a-Si at low temperature, showing the effect of the low temperature to switch from the etching to deposition regime on this material. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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