Autor: |
Xue, Lisha, Wang, Yuan, Zhu, Shuangmei, Mao, Qianhui, Jia, Xiaopeng, Zhang, Yuewen |
Zdroj: |
Journal of Materials Science: Materials in Electronics; Feb2023, Vol. 34 Issue 5, p1-8, 8p |
Abstrakt: |
We have synthesized the quaternary copper selenide BixCu2−3xSe0.95Te0.05 compounds by high-pressure followed with ball milling method and investigated their thermoelectric properties. The crystal structure and element doping are characterized and verified by the X-ray diffraction, high-resolution transmission electron microscope and X-ray photoelectron spectroscopy. Compared with other samples, the samples with x = 0.001 and 0.002 have larger layered grain size and smaller grain boundary. This may lead to the reduction of resistivity in a wide temperature range, thus realizing the optimization of electronic characteristics. The dislocation-induced lattice strain fluctuations may cause the abrupt thermal conductivity, which is contrary to the previous results. Eventually, a peak value of zT = 1.03 at 873 K is obtained for Bi0.001Cu1.997Se0.95Te0.05 and Bi0.002Cu1.994Se0.95Te0.05. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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