| Autor: |
Yuma Takebuchi, Daiki Shiratori, Takumi Kato, Daisuke Nakauchi, Noriaki Kawaguchi, Takayuki Yanagida |
| Předmět: |
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| Zdroj: |
Sensors & Materials; 2023, Vol. 35 Issue 2,Part 2, p507-512, 6p |
| Abstrakt: |
We synthesized 20Lu2O3-30Ga2O3-50SiO2 glasses doped with various concentrations of Sn using a floating zone furnace equipped with Xe arc lamps. The samples showed a luminescence band around 450 nm in both photoluminescence (PL) and scintillation spectra. The origin of the luminescence was ascribed to the T1-S0 transition of Sn2+ on the basis of the luminescence wavelength and PL decay time constant. The highest scintillation intensity and PL quantum yield were observed from the 1% Sn-doped sample. The afterglow level tended to decrease with increasing Sn doping, and the afterglow levels of the 1 and 3% Sn-doped samples were comparable to that of the conventional Tl-doped CsI scintillator. The optimal concentration of Sn for the glass was estimated to be 1%. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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