| Autor: |
Xu, Miao, Zou, Changwei, Gong, Benchao, Jia, Ke, Ye, Shusen, Hao, Zhenqi, Liu, Kai, Shi, Youguo, Lu, Zhong-Yi, Cai, Peng, Wang, Yayu |
| Předmět: |
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| Zdroj: |
Chinese Physics Letters; 3/1/2023, Vol. 40 Issue 3, p1-6, 6p |
| Abstrakt: |
The electronic evolution of Mott insulators into exotic correlated phases remains puzzling, because of electron interaction and inhomogeneity. Introduction of individual imperfections in Mott insulators could help capture the main mechanism and serve as a basis to understand the evolution. Here we utilize scanning tunneling microscopy to probe the atomic scale electronic structure of the spin-orbit-coupling assisted Mott insulator Sr3Ir2O7. It is found that the tunneling spectra exhibit a homogeneous Mott gap in defect-free regions, but near the oxygen vacancy in the rotated IrO2 plane the local Mott gap size is significantly enhanced. We attribute the enhanced gap to the locally reduced hopping integral between the 5 d electrons of neighboring Ir sites via the bridging planar oxygen p orbitals. Such bridging defects have a dramatic influence on local bandwidth, thus provide a new way to manipulate the strength of Mottness in a Mott insulator. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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